logo

PTF210901E Datasheet, Infineon Technologies AG

PTF210901E mhz equivalent, ldmos rf power field effect transistor 90 w/ 2110-2170 mhz.

PTF210901E Avg. rating / M : 1.0 rating-19

datasheet Download

PTF210901E Datasheet

Features and benefits


*
* Internal matching for wideband performance Typical two
  –carrier 3GPP WCDMA performance - Average output power = 19 W at
  –37 dBc.

Application

from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two
  –Ca.

Image gallery

PTF210901E Page 1 PTF210901E Page 2 PTF210901E Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts